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October 2009

Rooftop testing station site goes live

Jon Chambers, October 30, 2009

John Lawler mentioned our rooftop testing station back in April. We've undertaken a fun project over the last couple of weeks, and I'm pleased to announce our web site that shows data from the instruments in our rooftop solar testing station. You can check it out at http://roof.greenmountainengineering.com/.

Rooftop-station

Data is recorded whenever the sun is up in San Francisco and is displayed "live" (well, actually updated every 60 seconds) for the current day. If you select a day in the past from the calendar, you'll see data from that day. You'll also get a fancy time-lapse video showing the weather conditions for that day.

Although the setup is explained in much more detail on the actual site, the very short version of how this all works is that we have a computer in a weather-proof case on the roof. The computer collects data from all of the various instruments and sensors (including a Trac-Stat SL1) and sends it off to our web server. Our web server stores that data, processes it, and sends it to you in the form of a web site.

This whole arrangement is a simple analogue for a number of projects we've done for our clients. Although our rooftop testing station site shows off a publicly-accessible, read-only interface to a single set of equipment, we've built secure systems to control and monitor hundreds of discrete pieces of equipment simultaneously, log hundreds of gigabytes of data per year, and provide convenient access to equipment in remote locations.

Please let us know if you have any questions about the site or if you'd like to learn more about the kinds of things we can do to develop monitoring and control systems for you.

EUPVSEC Presentation and Poster Highlights

Max Davis, October 23, 2009

As a follow-up to my post a few weeks ago about the 2009 EUPVSEC (EU PVSEC 24), the following presentations were the ones I personally found most interesting (I've also uploaded a copy of the program for the oral sessions, which contains author information for these).

  • 2AO.3.4 Boron-Oxygen Related Defects in Cz-Silicon Solar Cells: Degradation, Regeneration and Beyond
  • 2AO.3.5 Quantitative Stress Measurements of Bulk Microdefects in Multicrystalline Silicon
  • 2BP.1.3 High Efficiency n-Type Si Solar Cells with Front Side Boron Emitter
  • 2CO.3.2 Crystalline Si Solar Cells with Selective Emitter for Industrial Mass Production
  • 3CO.6.3 Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750°C
  • 3CO.7.2 Epitaxy Wrap-Through Rear Contact Solar Cell Fabrication and Results
  • 4CO.5.3 World Record Module Efficiency for Large and Thin mc-Si Rear Contact Cells
  • 4CO.5.4 Analysis of PV Modules by Electroluminescence and IR Thermography
  • 2DP.2.2 Kerf-Free 20-150μm c-Si Wafering for Thin PV Manufacturing
  • 2DP.2.5 Physical Mechanisms of Breakdown in Multicrystalline Silicon Solar Cells 
  • 4EP.1.3 Results of 5 Years Module Manufacturing Research In European ‘Crystal Clear’ Project    

I also browsed or skimmed nearly 900 posters while there; below are just a selection of ones I found interesting (see the program for the visual presentations for more information):

  • 2CV.2.2 Investigation for 19% Efficiency at Multi-Crystalline Si Solar Cells by Industrially Probable Approach 
  • 2CV.2.3 Advances in Electroless Nickel Plating for the Metallization of Silicon Solar Cells Using Different Structuring Techniques for the ARC
  • 2CV.2.8 Laser Processes for Industrial Manufacturing of Solar Cells
  • 2CV.2.13 Microstructure and Mechanical Properties of Aluminum Back Contact Layers
  • 2CV.2.78 High Efficiency HIT Solar Cell on Thin (<100 μm) Silicon Wafer  
  • 2CV.5.83 Inkjet Texturing for Multicrystalline Silicon Solar Cells
  • 3AV.1.12 Hybrid Excimer Laser and Aluminium Induced Crystallisation of Silicon Thin Films
  • 4AV.3.2 The Evaluations of Physical Properties and Lamination Process Parameters of EVA Encapsulants by Thermal Analysis 
  • 4AV.3.39 Characterization of Thermo-Mechanical Behavior of Ribbon and Solder Materials
  • 4AV.3.54 The Effect of Accelerated Aging Tests on the Optical Properties of Silicone and EVA Encapsulants

Thin-Film Solar: Interpreting Efficiencies

Max Davis, October 19, 2009

Reporting the efficiency of a solar cell or module depends on a number of assumptions, and unrealistic assumptions are sometimes made in order to report the highest possible efficiency.

There are some cases where it is difficult to make fair and consistent assumptions. For example, when comparing different technologies (thin film, crystalline silicon, and CPV) which have different values for temperature coefficient, spectral dependence, land coverage, and other properties, it can be difficult to come up with a completely standard, comparable, and realistic method of rating power and efficiency.

However, within a particular type of technology (thin-film solar, for example), there is really no excuse for making non-standard assumptions and then omitting this critical information when you report your results. For this post I’m going to focus on particular misleading reporting practices I have seen used multiple times in the thin-film industry (that is, solar technologies such as CIS, CIGS, CdTe, and thin-film silicon, which includes amorphous silicon, and “micromorph” tandem devices).

I do understand that this poses a challenge to each individual company: If your competitors are reporting their efficiency in a misleading way, it is difficult to report your own results in the “correct” way if it gives the appearance that you have a lower-efficiency product. This is a form of arms race or “Prisoner’s Dilemma”, but this is also not my problem: my point here is to make sure people who read results know the right questions to ask to make sure companies are giving them realistic numbers with full disclosure on the most critical measurement assumptions.

Assumption: Aperture Area

One detail often glossed over is the notion of aperture area compared to full area. An aperture area efficiency for a module divides the output power by only the area covered with the active absorber, not including the border around the module where the edge seal is or the frame. In addition, in some cases (especially during R&D), companies mask or scribe away regions of the absorber where there is significant thickness variation due to edge effects in the deposition chamber, and don't include those edge regions in the measurement. A 25mm border on a Gen 5 glass sheet (1.1 x 1.4m) corresponds to about an 8% relative difference in area, or a roughly 1% difference in reported absolute efficiency for a 12% efficient module.

Note that in some cases aperture area is a reasonable way to report efficiency, especially during R&D when you want to report the overall potential of a technology and ignore some process issues, or if the deposited materials are a large fraction of your cost and your substrate is a low-cost plastic (in which case extra area of this plastic may not add as much cost as active module area). However, it’s important to clearly state that an aperture efficiency is what’s being reported.

Assumption: Light-Induced Degradation

Another reporting issue most relevant to thin-film silicon is the reporting of initial efficiency compared to stabilized efficiency. Stabilized efficiency is the relevant number for real-world applications, and refers to performance after the degradation that amorphous silicon undergoes when exposed to light for the first time (the Staebler-Wronski effect, also referred to as LID for Light Induced Degradation). However, some companies report the higher initial/unstabilized efficiencies, and only mention this is what they’re doing if you ask them directly “is that a stabilized efficiency?” This is important because a typical Staebler-Wronski degradation can be 10% relative, or even more. At the recent EUPVSEC, a number of companies mentioned that their LID at the cell level was 10%, but then were vague about their LID at the module level, or said something along the lines of “there are some challenges with LID on large area [Gen 8.5 glass = 2.2m x 2.6m!] modules,” effectively telling the audience that LID was significantly worse than 10% in their modules.

In other cases, thin-film manufacturers would report the power output and area of modules, but not the efficiency, or even the area, initial power, initial efficiency, and stabilized power, but not the stabilized efficiency. This is a bit silly, as anyone in the room can calculate the stabilized efficiency from these numbers.

So, thin-film manufacturers: If you’re going to show the performance of a new cell or module in a conference presentation, I suggest you include a summary table like the below, rather than making your audience guess or ask you about your assumptions. It only takes one slide, and saves everyone time; and if you don’t do this, savvy people in the audience realize you’re trying to pull the wool over their eyes when you are vague about your measurement conditions.


 

 

Area

Power [W]

Efficiency [%]

LID [% relative]

Cell

Initial

Aperture Area

1 cm2

 

 11.1%

 

Cell

Stabilized

Aperture Area

1 cm2

 

 10.0%

-10%

Module

Initial

Aperture Area

 1.5m2

 143

 9.3%

 

Module

Stabilized

Aperture Area

 1.5m2

 123

 8.0%

-14%

Module

Initial

Total Area

 1.5m2

 136

 9.1%

 

Module

Stabilized

Total Area

 1.5m2

 116

 7.8%

-14%

(the numbers above are arbitrary, just to provide an example)

Or if you really don’t want to use a table, a least attach the most relevant test details to your reported values, for example:

  • 10.4% (1cm2 Cell, Aperture, Stabilized)
  • 9.3% (Gen 5: 1.1x1.4m, Module, Aperture, Initial)
  • 8.7% (Gen 8.5: 2.2x2.6m, Module, Aperture, Initial)
  • 7.8% (Gen 8.5: 2.2x2.6m, Module, Aperture, Stabilized)

Assumption: Deposition Rate

Another question to ask when new efficiency results are reported is: “What was the deposition rate used to achieve the reported efficiency, and is that a realistic throughput according to your cost models?”

Typically, film quality and electrical efficiency go down as the deposition rate goes up. So a company may be able to get a higher efficiency “champion” module by using a very low deposition rate (one that is too low a throughput for volume manufacturing) when making that particular module. This result does have some value: it shows that a certain module efficiency is technically possible on large areas, and perhaps in the future with improved tools and processes, that efficiency might be achievable in manufacturing.

However, in production, companies can run cost models and pick some deposition rate that is a balance of throughput and module efficiency that leads to the best overall cost per watt and cost per area for the module. It’s not a trivial calculation because as efficiency goes down, module area at a given power goes up, so balance of system costs such as installation and land also go up slightly. But it’s also not economically sensible to use a process with dramatically lower throughput just to get an extra 0.1% of efficiency.

Assumption: Deposition Process

Another issue to consider is whether the fabrication processes used are industry standard ones, or less-used processes. If the latter, is there a path to scale-up of the process? It is certainly acceptable to explore new deposition processes in pursuit of better performance, lower cost, or even proof-of-concept devices. However, if a company is presenting results in an established industry where there is a common deposition tool and method (for example, a-si deposited by 13.56MHz PECVD), the company should identify if their devices were made with a different process (VHF plasma, HWCVD, or so on).

Conclusions

There are a number of common ways in which efficiencies reported by thin-film solar companies can be difficult to interpret and compare, based on variation in how the numbers are calculated. Three of the most critical are whether an aperture-area measurement is made, whether light-induced degradation of thin-film silicon is included, and whether the deposition rate was unrealistically low. It is the responsibility of companies to clearly disclose their measurement assumptions, and also of people receiving results to demand this disclosure. I have included a very simple table for reporting results which would avoid the need for perhaps 40% of the questions I have heard asked of thin-film manufacturers at conference presentations. Now let’s all get back to engineering and solving problems!

EUPVSEC Highlights

Max Davis, October 12, 2009

As I thought about how to summarize my week at EUPVSEC 24 in Hamburg, I decided to (mostly) not talk about what record efficiency results were reported by what group. This type of information is already reported by many other blog posts, press releases, and news aggregators, and specific efficiency numbers can be misleading taken out of context. For these sorts of numerical summaries I recommend checking out this PDF of Heinz Ossenbrink's summary presentation given on Friday at EUPVSEC. 

Instead, I'm going to summarize my impressions of the show in several technical areas, and talk about other things that may be harder to get a feeling for by just reading the published papers later. This post will also primarily focus on the technical and poster sessions and related discussions, not the trade show. If you have any questions, feel free to email me at mdavis (at) greenmountainengineering.com, or leave a comment on this blog post.

As this is a fairly long post, here is an overview of the topics:

  • Silicon cells and modules
  • Thin film
  • Wafer equivalent thick film / thin film cells
  • Reflectors
  • Characterization and modeling
  • Inverters and grid interconnections
  • Other technologies
  • Changes in the business climate [future blog post] 

Silicon cells and modules:

There continues to be substantial exploration of—and room for innovation in—new cell designs and manufacturing-scalable fabrication processes in the primary solar technology: crystalline silicon. This includes improved or lower-cost materials (for example, adaptation of metallurgical-grade silicon to solar cells, reduction of the effects of Boron-Oxygen defects in p-type material, and so on), as well as improvements in cell architecture (such as improved texturing for light trapping, metallization, selective emitters, surface passivation, and more significant changes in cell architectures such as rear-contact cells and heterojunctions).

While a variety of improvements in all of these areas have been demonstrated by research groups in the past and integrated into some manufacturing processes, a number of proposed improvements have not yet been widely adopted. This is both because there is still engineering to be done to come up with scalable, cost-effective implementations, and because any new material or process comes with some technical risk and thus must be demonstrated as reliable in the field before major scale-up. Selective emitters do continue to be an area of scale-up, with at least one Chinese manufacturer now using them in a production module design, and other companies selling turnkey wafer manufacturing lines that include a particular selective emitter process.

Progress also continues to be made on fabrication of thinner silicon wafers (e,g, Silicon Genesis’s cleaving process, as well as a number of wire saw optimization projects), and cells (a number of presentations were made on results obtained on cells 120 microns or thinner, including Sanyo’s poster on their impressive >22% efficient, 98um-thick cell based on their HIT technology).

However, reliable, high-yield integration of cells this thin into modules will be a challenge. Towards this end, the EU Crystal Clear project—particularly, sub-project 5: modules—showed some success using rear contact cells with electrically-conductive adhesives and a printed-circuit-board-style backplane to enable a lower-temperature, closer-packed, lower-stress method of module fabrication. Advent Solar is also an example of a company integrating rear contact cells onto a backplane (described and shown in a video on their web site).

IMG_0662
Image: ECN monolithic backplane for use with rear contact cells

There were also a number of companies discussing—and in some cases demonstrating manufacturing tools for—non-contact metallization techniques (e.g. jet printing combined with electroplating, for example), other non-contact processing techniques (e.g. laser soldering, use of laser ablation or jet-printed resists for patterning of dielectrics), and low-stress wafer handling methods. 

Non-contact processing techniques are one way of reducing wafer damage during processing, but there are a range of other challenges to fabricating reliable modules with thin cells.

Thin Films

There were fewer presentations on CdTe and CIGS than I’m used to at conferences, though that doesn’t mean that substantial work isn’t being done in that area; the thin-film production leader First Solar rarely presents at conferences, for example, and we’ve worked with a number of other CIGS and CdTe startups at various levels of stealth that also choose not to present on their work.

There were a number of presentations on thin-film silicon, though, both from research groups and manufacturers. In summary, groups are getting to stabilized module efficiencies of 6 - 7% for a-si (amorphous silicon) and 8.0 - 9.5% for micromorph (a tandem junction a-si/uc-si). But there are many measurement and reporting details to look at carefully when people report thin-film silicon efficiencies (e.g. initial vs. stabilized, aperture area vs. full area, overall size, and what the deposition rate was and how reasonable a throughput that is for manufacturing– to name just a few). I'll comment further on interpreting and understanding thin-film efficiencies in a future blog post

Thick Films / Wafer Equivalent Thin Films

One of the most notable changes—which may partly just be a change in my perception—was the number of people pursuing what were sometimes called “wafer equivalent” devices. These are crystalline cells typically in the 10-30um thickness range, grown on a substrate (one example architecture is shown below).

IMG_0603
Image: one architecture for wafer-replacement crystalline silicon, presentation 3CO.6.3 by NREL

For example, a cell could be grown by gas-phase epitaxy on a lower-quality metallurgical-grade silicon cell “template”. Or, an amorphous silicon layer could be deposited on a substrate by some rapid, lower-than-usual-quality CVD process and then crystallized, using a laser, metal-induced crystallization, or solid phase crystallization. These methods could even be combined, to deposit and crystallize a thin seed layer by one technique, and then use epitaxy to grow a thicker crystalline layer on top of the seed layer. Companies like CSG Solar have pursued one approach towards polysilicon cells (deposition of a-si on glass followed by solid phase crystallization), but there a variety of significantly different approaches being pursued—this is a fairly broad technical category.

There were a number of presentations in this field, and I’m also aware of a number of stealth companies pursuing variations on these techniques. I find this interesting because the semiconductor industry has addressed similar challenges in the past, and there is potential for the solar industry to bring in experience from research in the IC and LCD TFT backplane industries.

Reflectors

Reflectors are important for improved light trapping in technologies including thin-film modules, thick-film “wafer equivalent” cells described above, and even conventional multicrystalline silicon wafers.. This is an area where there will continue to be significant development beyond the basic chemical texture etches that are effective for single-crystalline silicon wafers.

Materials, Characterization, and Modeling

Most of the usual characterization techniques for materials, cells, and modules were discussed, such as EBIC, EBSD, SIMS, XRD, IR imaging of various types, EL (electroluminescence), PL (photoluminescence), Raman spectroscopy, and so on. But I also saw presentations on some methods new to me, such as: photoelasticity (a mechanical-optical method for examining defects by looking at the stress fields produced by them) and Dynamic ILM (infrared lifetime mapping, but based on a chopped light source and looking at the shape of the resulting waveform).

There were also a number of discussions about dopants and impurities in silicon, as well as various methods for characterizing, modeling, and reducing the effects of them.

Inverters and grid integration:

The European inverter standard EN50530 has finally been released, and includes some provisions for how to characterize the behavior of inverters’ MPPT (maximum power point tracking) algorithms, a method by which the inverter tries to operate a solar module at the current and voltage of maximum power rather than at a fixed voltage.

As solar (and other intermittent-supply renewable energy technologies such as wind) grows to be a more significant contribution to electricity production in some countries, utilities are taking it more seriously. This leads to additional requirements (and opportunities to add value) for inverters, including the ability to supply reactive power and in other ways contribute to grid stability, as well as the ability to stay connected and ride through low voltage events or grid failures, in part to avoid cascading shutdowns of more and more plants if grid voltage drops (Germany has learned some lessons in this area with the growth of the wind industry there and some grid issues).

Other Technologies:

Some further progress has been made in areas such as intermediate band cells (using quantum dots or bulk materials) and organic photovoltaics, as well as in building integrated PV, but I don’t see any of these becoming significant in the near term.  That is not to say they won’t have niches that are profitable for the companies involved, but they are unlikely to contribute a significant portion of the total gigawatts of installed PV capacity.